onsemi FDMS Type N-Channel MOSFET, 67 A, 120 V Enhancement, 8-Pin PQFN FDMS4D0N12C
- RS Stock No.:
- 178-4409
- Mfr. Part No.:
- FDMS4D0N12C
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 10 units)*
SGD48.31
(exc. GST)
SGD52.66
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Final 2,950 unit(s), ready to ship from another location
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD4.831 | SGD48.31 |
| 100 - 490 | SGD4.181 | SGD41.81 |
| 500 - 990 | SGD3.624 | SGD36.24 |
| 1000 + | SGD3.105 | SGD31.05 |
*price indicative
- RS Stock No.:
- 178-4409
- Mfr. Part No.:
- FDMS4D0N12C
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 67A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | FDMS | |
| Package Type | PQFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 106W | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.05mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 6 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 67A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series FDMS | ||
Package Type PQFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 106W | ||
Maximum Operating Temperature 150°C | ||
Height 1.05mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 6 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
This N-Channel MV MOSFET is produced using advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
Shielded Gate MOSFET Technology
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 67 A
Max rDS(on) = 8.0 mΩ at VGS = 6 V, ID = 33 A
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
Applications:
This product is general usage and suitable for many different applications.
End Products:
AC-DC and DC-DC Power Supplies
Related links
- onsemi FDMS Type N-Channel MOSFET 120 V Enhancement, 8-Pin PQFN
- onsemi FDMS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PQFN
- onsemi FDMS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PQFN FDMS4D5N08LC
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 FDPF045N10A
- onsemi NVMFS5H663NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN
- onsemi PowerTrench Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- onsemi NVMFS5H663NL Type N-Channel MOSFET 60 V Enhancement, 5-Pin DFN NVMFS5H663NLT1G
- onsemi NTH Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247-4L NTH4L023N065M3S