Microchip TN0110 N-Channel MOSFET, 350 mA, 100 V, 3-Pin TO-92 TN0110N3-G
- RS Stock No.:
- 177-9742P
- Mfr. Part No.:
- TN0110N3-G
- Manufacturer:
- Microchip
Stock information currently inaccessible
- RS Stock No.:
- 177-9742P
- Mfr. Part No.:
- TN0110N3-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 350 mA | |
| Maximum Drain Source Voltage | 100 V | |
| Series | TN0110 | |
| Package Type | TO-92 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Width | 4.06mm | |
| Length | 5.08mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 5.33mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.5V | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 350 mA | ||
Maximum Drain Source Voltage 100 V | ||
Series TN0110 | ||
Package Type TO-92 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Width 4.06mm | ||
Length 5.08mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 5.33mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.5V | ||
- COO (Country of Origin):
- TW
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold - 2.0V max.
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
High input impedance
Low input capacitance - 50pF typical
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage