Microchip DN2625 N-Channel MOSFET, 1.1 A, 250 V Depletion, 3-Pin DPAK DN2625K4-G
- RS Stock No.:
- 177-2816
- Mfr. Part No.:
- DN2625K4-G
- Manufacturer:
- Microchip
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 177-2816
- Mfr. Part No.:
- DN2625K4-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.1 A | |
| Maximum Drain Source Voltage | 250 V | |
| Series | DN2625 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.5 Ω | |
| Channel Mode | Depletion | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Length | 6.6mm | |
| Typical Gate Charge @ Vgs | 7.04 nC @ 1.5 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 2.29mm | |
| Forward Diode Voltage | 1.8V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.1 A | ||
Maximum Drain Source Voltage 250 V | ||
Series DN2625 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.5 Ω | ||
Channel Mode Depletion | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Length 6.6mm | ||
Typical Gate Charge @ Vgs 7.04 nC @ 1.5 V | ||
Number of Elements per Chip 1 | ||
Width 6.1mm | ||
Maximum Operating Temperature +150 °C | ||
Height 2.29mm | ||
Forward Diode Voltage 1.8V | ||
Minimum Operating Temperature -55 °C | ||
DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.
Additional Features: Very low gate threshold voltage
Designed to be source-driven
Low switching losses
Low effective output capacitance
Designed for inductive loads
Well matched for low second harmonic when driven by MD2130
Designed to be source-driven
Low switching losses
Low effective output capacitance
Designed for inductive loads
Well matched for low second harmonic when driven by MD2130