onsemi NVTFS6H850N Type N-Channel MOSFET, 68 A, 80 V Enhancement, 8-Pin WDFN NVTFS6H850NTAG
- RS Stock No.:
- 172-3379
- Mfr. Part No.:
- NVTFS6H850NTAG
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 25 units)*
SGD30.15
(exc. GST)
SGD32.875
(inc. GST)
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | SGD1.206 | SGD30.15 |
| 50 - 75 | SGD1.105 | SGD27.63 |
| 100 - 225 | SGD1.022 | SGD25.55 |
| 250 - 475 | SGD0.948 | SGD23.70 |
| 500 + | SGD0.91 | SGD22.75 |
*price indicative
- RS Stock No.:
- 172-3379
- Mfr. Part No.:
- NVTFS6H850NTAG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 68A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVTFS6H850N | |
| Package Type | WDFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 9.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.75mm | |
| Length | 3.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 68A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVTFS6H850N | ||
Package Type WDFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 9.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 0.75mm | ||
Length 3.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (5x6 mm)
Compact Design
Low rDS(on)
Minimize Conduction Loss
Low QG and Capacitance
Minimize Driver Losses
NVMFD5C446NLWF − Wettable Flank Option
Enhanced Optical Inspection
PPAP Capable
Applications
Solenoid driver
Low side / high side driver
Automotive engine controllers
Antilock braking systems
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