onsemi NVD5C464N N-Channel MOSFET, 59 A, 40 V Enhancement, 4-Pin TO-252 NVD5C464NT4G
- RS Stock No.:
- 172-3367
- Mfr. Part No.:
- NVD5C464NT4G
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (25 units, in packs of 25)*
SGD62.03
(exc. GST)
SGD67.60
(inc. GST)
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- Shipping from 11 October 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | SGD2.481 | SGD62.03 |
| 100 - 225 | SGD2.419 | SGD60.48 |
| 250 - 475 | SGD2.359 | SGD58.98 |
| 500 - 1225 | SGD2.30 | SGD57.50 |
| 1250 + | SGD2.242 | SGD56.05 |
*price indicative
- RS Stock No.:
- 172-3367
- Mfr. Part No.:
- NVD5C464NT4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 59A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Series | NVD5C464N | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 900mV | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.25mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 59A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Series NVD5C464N | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 900mV | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.25mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency.
700 V @ TJ = 150 oC
Higher system reliability at low temperature operation
Ultra Low Gate Charge (Typ. Qg = 259 nC)
Lower switching loss
Low Effective Output Capacitance (Typ. Coss(eff.) = 1972 pF)
Lower switching loss
Excellent body diode performance (low Qrr, robust body diode)
Higher system reliability in LLC and Phase shift full bridge circuit
Optimized Capacitance
Lower peak Vds and lower Vgs oscillation
Typ. RDS(on) = 23 mΩ
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