Infineon Si4435DYPbF Type P-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SO-8 SI4435DYTRPBF

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Subtotal (1 pack of 10 units)*

SGD8.59

(exc. GST)

SGD9.36

(inc. GST)

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Units
Per unit
Per Pack*
10 - 90SGD0.859SGD8.59
100 - 490SGD0.829SGD8.29
500 - 990SGD0.787SGD7.87
1000 - 1990SGD0.746SGD7.46
2000 +SGD0.709SGD7.09

*price indicative

Packaging Options:
RS Stock No.:
171-1913
Mfr. Part No.:
SI4435DYTRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

8A

Maximum Drain Source Voltage Vds

30V

Series

Si4435DYPbF

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

40nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Length

5mm

Width

4 mm

Height

1.5mm

Standards/Approvals

No

Automotive Standard

No

Non Compliant

The Infineon SI4435DY is the 30V single P-channel HEXFET power MOSFET in a SO-8 package. These P-channel HEXFET power MOSFETs from International Rectifier utilize Advanced processing techniques to achieve the extremely low on-resistance per silicon area.

P-channel MOSFET

Surface mount

Available in tape and reel

Lead free

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