N-Channel MOSFET, 24 A, 200 V, 8-Pin TDSON Infineon BSC500N20NS3GATMA1
- RS Stock No.:
- 170-2351P
- Mfr. Part No.:
- BSC500N20NS3GATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (10 reels of 10 units)**. Quantities below 150 on continuous strip
SGD218.30
(exc. GST)
SGD237.90
(inc. GST)
Stock check temporarily unavailable - call for stock availability
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit |
|---|---|
| 100 - 490 | SGD2.138 |
| 500 - 990 | SGD2.073 |
| 1000 - 2490 | SGD2.01 |
| 2500 + | SGD1.951 |
**price indicative
- RS Stock No.:
- 170-2351P
- Mfr. Part No.:
- BSC500N20NS3GATMA1
- Manufacturer:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | OptiMOS™ 3 | |
| Package Type | TDSON | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 50 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 96 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | 20 V | |
| Number of Elements per Chip | 1 | |
| Width | 6.35mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Length | 5.35mm | |
| Height | 1.1mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 200 V | ||
Series OptiMOS™ 3 | ||
Package Type TDSON | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 96 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 20 V | ||
Number of Elements per Chip 1 | ||
Width 6.35mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Length 5.35mm | ||
Height 1.1mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||