N-Channel MOSFET, 16 A, 60 V, 3-Pin D2PAK STMicroelectronics STB16NF06LT4
- RS Stock No.:
- 168-7553
- Mfr. Part No.:
- STB16NF06LT4
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 reel of 1000 units)**
SGD843.00
(exc. GST)
SGD919.00
(inc. GST)
Temporarily out of stock - back order for despatch 22/09/2025, delivery within 4 working days from despatch date*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Reel** |
|---|---|---|
| 1000 - 2000 | SGD0.843 | SGD843.00 |
| 3000 - 4000 | SGD0.811 | SGD811.00 |
| 5000 + | SGD0.761 | SGD761.00 |
**price indicative
- RS Stock No.:
- 168-7553
- Mfr. Part No.:
- STB16NF06LT4
- Manufacturer:
- STMicroelectronics
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 60 V | |
| Series | STripFET | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Number of Elements per Chip | 1 | |
| Width | 10.4mm | |
| Typical Gate Charge @ Vgs | 7.3 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Length | 10.75mm | |
| Height | 4.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 60 V | ||
Series STripFET | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Number of Elements per Chip 1 | ||
Width 10.4mm | ||
Typical Gate Charge @ Vgs 7.3 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Length 10.75mm | ||
Height 4.6mm | ||
Minimum Operating Temperature -55 °C | ||
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