STMicroelectronics Type N-Channel MOSFET, 2.5 A, 800 V Enhancement, 3-Pin IPAK
- RS Stock No.:
- 168-6701
- Mfr. Part No.:
- STD3NK80Z-1
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 75 units)*
SGD93.15
(exc. GST)
SGD101.55
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 21 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 75 - 150 | SGD1.242 | SGD93.15 |
| 225 - 300 | SGD1.195 | SGD89.63 |
| 375 + | SGD1.12 | SGD84.00 |
*price indicative
- RS Stock No.:
- 168-6701
- Mfr. Part No.:
- STD3NK80Z-1
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 70W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Height | 6.2mm | |
| Width | 2.4 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 70W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Height 6.2mm | ||
Width 2.4 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin IPAK STD3NK80Z-1
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 3-Pin IPAK STD1NK60-1
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin IPAK
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin IPAK
- STMicroelectronics Type N-Channel MOSFET 1 kV Enhancement, 3-Pin IPAK STU2NK100Z
- STMicroelectronics Type N-Channel MOSFET 650 V Enhancement, 3-Pin IPAK STD5NM60T4
- STMicroelectronics Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220