IXYS HiperFET, X2-Class Type N-Channel MOSFET, 100 A, 650 V Enhancement, 3-Pin TO-264
- RS Stock No.:
- 168-4813
- Mfr. Part No.:
- IXFK100N65X2
- Manufacturer:
- IXYS
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Subtotal (1 tube of 25 units)*
SGD508.10
(exc. GST)
SGD553.825
(inc. GST)
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In Stock
- 175 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 + | SGD20.324 | SGD508.10 |
*price indicative
- RS Stock No.:
- 168-4813
- Mfr. Part No.:
- IXFK100N65X2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | HiperFET, X2-Class | |
| Package Type | TO-264 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 5.3mm | |
| Length | 20.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series HiperFET, X2-Class | ||
Package Type TO-264 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.04kW | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 5.3mm | ||
Length 20.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS