Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 onsemi FDC6305N
- RS Stock No.:
- 166-2698
- Mfr. Part No.:
- FDC6305N
- Manufacturer:
- onsemi
8260 In stock for delivery within 4 working days
Price Each (On a Reel of 3000)
SGD0.34
(exc. GST)
SGD0.37
(inc. GST)
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | SGD0.34 | SGD1,020.00 |
*price indicative
- RS Stock No.:
- 166-2698
- Mfr. Part No.:
- FDC6305N
- Manufacturer:
- onsemi
Technical data sheets
Legislation and Compliance
Product Details
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 2.7 A |
| Maximum Drain Source Voltage | 20 V |
| Series | PowerTrench |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 128 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 0.4V |
| Maximum Power Dissipation | 960 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Length | 3mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 3.5 nC @ 4.5 V |
| Width | 1.7mm |
| Number of Elements per Chip | 2 |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |