P-Channel MOSFET, 18.6 A, 60 V, 3-Pin DPAK Infineon SPD18P06PGBTMA1
- RS Stock No.:
- 165-7522
- Mfr. Part No.:
- SPD18P06PGBTMA1
- Manufacturer:
- Infineon
Discontinued product
- RS Stock No.:
- 165-7522
- Mfr. Part No.:
- SPD18P06PGBTMA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
Product Details
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant
· Pb-free lead plating, RoHS compliant
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 18.6 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 130 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2.1V |
| Maximum Power Dissipation | 80 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Transistor Material | Si |
| Length | 6.73mm |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Width | 6.22mm |
| Height | 2.41mm |
| Series | SIPMOS |
| Minimum Operating Temperature | -55 °C |