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Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 165-7181
Mfr. Part No.:: SI2337DS-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 2.2 A, 80 V Enhancement, 3-Pin SOT-23

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RS Stock No.:: 165-7181
Mfr. Part No.:: SI2337DS-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.2A
	Maximum Drain Source Voltage Vds	80V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.303Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-50°C
	Typical Gate Charge Qg @ Vgs	11nC
	Maximum Power Dissipation Pd	2.5W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC 61249-2-21
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.2A
	Maximum Drain Source Voltage Vds 80V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.303Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -50°C
	Typical Gate Charge Qg @ Vgs 11nC
	Maximum Power Dissipation Pd 2.5W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC 61249-2-21
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

COO (Country of Origin):: CN

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