N-Channel MOSFET, 28 A, 100 V, 8-Pin PowerPAK SO-8 Vishay SI7456DDP-T1-GE3
- RS Stock No.:
- 165-7065
- Mfr. Part No.:
- SI7456DDP-T1-GE3
- Manufacturer:
- Vishay
Subtotal (1 reel of 3000 units)**
SGD2,862.00
(exc. GST)
SGD3,120.00
(inc. GST)
15000 In stock for delivery within 4 working days*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Reel** |
|---|---|---|
| 3000 + | SGD0.954 | SGD2,862.00 |
**price indicative
- RS Stock No.:
- 165-7065
- Mfr. Part No.:
- SI7456DDP-T1-GE3
- Manufacturer:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 28 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | PowerPAK SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 31 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 35.7 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 19.6 nC @ 10 V | |
| Length | 6.25mm | |
| Transistor Material | Si | |
| Width | 5.26mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.12mm | |
Select all | ||
|---|---|---|
Manufacturer Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 28 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type PowerPAK SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 31 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 35.7 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 19.6 nC @ 10 V | ||
Length 6.25mm | ||
Transistor Material Si | ||
Width 5.26mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.12mm | ||
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