P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5419DU-T1-GE3

RS Stock No.:: 165-6326
Mfr. Part No.:: SI5419DU-T1-GE3
Manufacturer:: Vishay

P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5419DU-T1-GE3

This image is representative of the product range

Price Each (On a Reel of 3000)

SGD0.326

(exc. GST)

SGD0.355

(inc. GST)

240 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Reel**
3000 +	SGD0.326	SGD978.00

**price indicative

RS Stock No.:: 165-6326
Mfr. Part No.:: SI5419DU-T1-GE3
Manufacturer:: Vishay

Si5419DU, P-Channel 30V (D-S) MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	9.9 A
Maximum Drain Source Voltage	30 V
Package Type	PowerPAK ChipFET
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	33 mΩ
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	31 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	1.98mm
Typical Gate Charge @ Vgs	30 nC @ 10 V
Length	3.08mm
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.85mm

P-Channel MOSFET, 9.9 A, 30 V, 8-Pin PowerPAK ChipFET Vishay SI5419DU-T1-GE3

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

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