Vishay N-Channel MOSFET, 50 A, 40 V Enhancement, 3-Pin TO-252 SUD50N04-8M8P-4GE3
- RS Stock No.:
- 165-6284
- Mfr. Part No.:
- SUD50N04-8M8P-4GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
SGD2,327.50
(exc. GST)
SGD2,537.50
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 5000 | SGD0.931 | SGD2,327.50 |
| 7500 - 10000 | SGD0.896 | SGD2,240.00 |
| 12500 + | SGD0.84 | SGD2,100.00 |
*price indicative
- RS Stock No.:
- 165-6284
- Mfr. Part No.:
- SUD50N04-8M8P-4GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0088Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Forward Voltage Vf | 810mV | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 48.1W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.38mm | |
| Width | 6.22mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0088Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Forward Voltage Vf 810mV | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 48.1W | ||
Maximum Operating Temperature 150°C | ||
Height 2.38mm | ||
Width 6.22mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Length 6.73mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TW
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
- Vishay N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 SUD50N04-8M8P-4GE3
- ROHM RD3G500GN N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS-T2 N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 IPD50N04S408ATMA1
- ROHM RD3G500GN N-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G500GNTL
- Vishay Single SQ Rugged N-Channel MOSFET 50 V Enhancement, 3-Pin TO-252 SQD50N05-11L_GE3
- Vishay TrenchFET P-Channel MOSFET -40 V Enhancement, 3-Pin TO-252 SQD50P04-09L_NE3
- Vishay SUD50P04-08 Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 SUD50P04-08-GE3
- Vishay N-Channel MOSFET 400 V Enhancement, 3-Pin TO-252 IRFR310TRPBF