Dual N-Channel MOSFET, 12 A, 20 V, 8-Pin SO-8 Infineon IRF9910TRPBF

Discontinued product

Technical data sheets

20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

Low RDS(ON) at 4.5V VGS
Very Low Gate Charge
Fully Characterized Avalanche Voltage and Current
Dual N-Channel MOSFET

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Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	12 A
Maximum Drain Source Voltage	20 V
Package Type	SO-8
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	18.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.55V
Minimum Gate Threshold Voltage	1.65V
Maximum Power Dissipation	2 W
Maximum Gate Source Voltage	±20 V
Maximum Operating Temperature	+150 °C
Length	5mm
Width	4mm
Number of Elements per Chip	2
Typical Gate Charge @ Vgs	15 nC @ 4.5 V
Forward Diode Voltage	1V
Height	1.5mm
Minimum Operating Temperature	-55 °C
Series	IRF9910