Vishay SUD50P06-15 Type P-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-252 SUD50P06-15-GE3
- RS Stock No.:
- 152-6380
- Mfr. Part No.:
- SUD50P06-15-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD19.33
(exc. GST)
SGD21.07
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Limited stock
- Plus 65 left, shipping from 23 March 2026
- Plus 205 left, shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 10 | SGD3.866 | SGD19.33 |
| 15 - 40 | SGD3.768 | SGD18.84 |
| 45 + | SGD3.49 | SGD17.45 |
*price indicative
- RS Stock No.:
- 152-6380
- Mfr. Part No.:
- SUD50P06-15-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | SUD50P06-15 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | -1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 113W | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Width | 6.22 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series SUD50P06-15 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf -1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 113W | ||
Maximum Operating Temperature 150°C | ||
Height 2.38mm | ||
Length 6.73mm | ||
Width 6.22 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
TrenchFET® Power MOSFET
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