Nexperia N-Channel MOSFET, 4.1 A, 80 V Enhancement, 8-Pin DFN PMPB95ENEAX
- RS Stock No.:
- 151-3118
- Mfr. Part No.:
- PMPB95ENEAX
- Manufacturer:
- Nexperia
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (25 units, in packs of 25)*
SGD15.88
(exc. GST)
SGD17.30
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 22 February 2027
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 225 | SGD0.635 | SGD15.88 |
| 250 - 600 | SGD0.604 | SGD15.10 |
| 625 - 1225 | SGD0.574 | SGD14.35 |
| 1250 - 2475 | SGD0.544 | SGD13.60 |
| 2500 + | SGD0.516 | SGD12.90 |
*price indicative
- RS Stock No.:
- 151-3118
- Mfr. Part No.:
- PMPB95ENEAX
- Manufacturer:
- Nexperia
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 202mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 15.6W | |
| Typical Gate Charge Qg @ Vgs | 9.9nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Height | 650μm | |
| Standards/Approvals | No | |
| Width | 2.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 202mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 15.6W | ||
Typical Gate Charge Qg @ Vgs 9.9nC | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Height 650μm | ||
Standards/Approvals No | ||
Width 2.1mm | ||
Automotive Standard AEC-Q101 | ||
80 V, single N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Tin-plated 100 % solderable side pads for optical solder inspection
AEC-Q101 qualified
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