ROHM RE1C002ZP Type P-Channel MOSFET, 200 mA, 20 V Enhancement, 3-Pin SC-75 RE1C002ZPTL
- RS Stock No.:
- 148-6960
- Mfr. Part No.:
- RE1C002ZPTL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 200 units)*
SGD36.20
(exc. GST)
SGD39.40
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Last RS stock
- Plus 600 unit(s) shipping from 29 December 2025
- Final 400 unit(s) shipping from 05 January 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 200 - 200 | SGD0.181 | SGD36.20 |
| 400 - 800 | SGD0.177 | SGD35.40 |
| 1000 - 1800 | SGD0.171 | SGD34.20 |
| 2000 - 9800 | SGD0.166 | SGD33.20 |
| 10000 + | SGD0.161 | SGD32.20 |
*price indicative
- RS Stock No.:
- 148-6960
- Mfr. Part No.:
- RE1C002ZPTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | RE1C002ZP | |
| Package Type | SC-75 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9.6Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.96 mm | |
| Length | 1.7mm | |
| Standards/Approvals | RoHS | |
| Height | 0.8mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Series RE1C002ZP | ||
Package Type SC-75 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9.6Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 0.96 mm | ||
Length 1.7mm | ||
Standards/Approvals RoHS | ||
Height 0.8mm | ||
Automotive Standard No | ||
Low voltage(12V) drive type
Pch Small-signal MOSFET
Small Surface Mount Package
Pb Free/RoHS Compliant
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