N-Channel MOSFET, 80 A, 250 V, 3-Pin TO-220 IXYS IXFP80N25X3

IXYS Corporation (NASDAQ: IXYS), a global manufacturer of power semiconductors and integrated circuits (ICs) for energy efficiency, power management, transportation, medical, and motor control applications, has released a new power semiconductor product line: 250V Ultra-Junction X3-Class HiPerFET™ Power MOSFETs. With on-resistances and gate charges as low as 4.5 milliohms and 21 nanocoulombs, respectively, these devices enable highest power densities and energy efficiencies in a wide variety of high-speed power conversion applications.Developed using a charge compensation principle and proprietary process technology, the new MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry (5 milliohms in the TO-264 package and 4.5 milliohms in the SOT-227, for instance). The fast intrinsic body diodes HiPerFETs™ of the MOSFETs display very soft recovery characteristics, minimizing voltage overshoots and electromagnetic interference (EMI), especially in half or full-bridge topologies. With low reverse recovery charge and time, the diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency.Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters.Well-suited applications include battery chargers for light electric vehicles (LEVs), synchronous rectification in switching power supplies, motor control, DC-DC converters, uninterruptible power supplies, electric forklifts, Class-D audio amplifiers, and telecom systems.The new 250V X3-Class Power MOSFETs with HiPerFET™ body diodes are available in the following international standard size packages: TO-3P, TO-220 (overmolded or standard), TO-247, PLUS247, TO-252, TO-263, TO-264, TO-268HV, SOT-227. Some example part numbers include IXFA60N25X3, IXFP80N25X3, IXFT170N25X3HV and IXFK240N25X3, with current ratings of 60A, 80A, 170A, and 240A, respectively.

Lowest on-resistance RDS(ON) and gate charge Qg
Fast soft recovery body diode dv/dt ruggedness
Superior avalanche capability
International standard packages
Battery chargers for light electric vehicles
Synchronous rectification in switching power supplies
Motor control
DC-DC converters
Uninterruptible power supplies
Electric forklifts
Class-D audio amplifiers
Telecom systems
High efficiency
High power density
Improved system reliability
Easy to design in

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