N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

RS Stock No.:: 146-1745
Mfr. Part No.:: IXFK120N30P3
Manufacturer:: IXYS

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

This image is representative of the product range

Price Each (In a Tube of 25)**

SGD18.343

(exc. GST)

SGD19.994

(inc. GST)

40 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for orders over SGD250.00 (ex GST)

Units	Per unit	Per Tube**
25 +	SGD18.343	SGD458.575

**price indicative

RS Stock No.:: 146-1745
Mfr. Part No.:: IXFK120N30P3
Manufacturer:: IXYS

IXFK120N30P3, IXFX120N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Diode
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Voltage	300 V
Package Type	TO-264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	27 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.13 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Width	5.13mm
Number of Elements per Chip	1
Length	19.96mm
Typical Gate Charge @ Vgs	150 nC @ 10 V
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	26.16mm

N-Channel MOSFET, 120 A, 300 V, 3-Pin TO-264 IXYS IXFK120N30P3

FREE delivery for orders over SGD250.00 (ex GST)

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series

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