N-Channel MOSFET, 10.6 A, 550 V, 3-Pin TO-220 Infineon IPP50R380CEXKSA1

RS Stock No.:: 145-8903
Mfr. Part No.:: IPP50R380CEXKSA1
Manufacturer:: Infineon

N-Channel MOSFET, 10.6 A, 550 V, 3-Pin TO-220 Infineon IPP50R380CEXKSA1

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Added

Price Each (In a Tube of 50)

SGD1.729

(exc. GST)

SGD1.885

(inc. GST)

Units	Per unit	Per Tube*
50 - 100	SGD1.729	SGD86.45
150 - 200	SGD1.664	SGD83.20
250 +	SGD1.56	SGD78.00
*price indicative

RS Stock No.:: 145-8903
Mfr. Part No.:: IPP50R380CEXKSA1
Manufacturer:: Infineon

Technical data sheets

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Infineon CoolMOS™ CE Power MOSFET

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	10.6 A
Maximum Drain Source Voltage	550 V
Package Type	TO-220
Series	CoolMOS CE
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	380 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	73 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Number of Elements per Chip	1
Width	4.57mm
Length	10.36mm
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	24.8 nC @ 10 V
Forward Diode Voltage	0.85V
Minimum Operating Temperature	-55 °C
Height	15.95mm