Infineon OptiMOS 2 Type N-Channel MOSFET, 69 A, 100 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 145-8707
- Mfr. Part No.:
- IPP12CN10LGXKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
SGD102.60
(exc. GST)
SGD111.85
(inc. GST)
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In Stock
- 1,750 unit(s) ready to ship from another location
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Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 100 | SGD2.052 | SGD102.60 |
| 150 - 200 | SGD1.975 | SGD98.75 |
| 250 + | SGD1.851 | SGD92.55 |
*price indicative
- RS Stock No.:
- 145-8707
- Mfr. Part No.:
- IPP12CN10LGXKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 69A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | OptiMOS 2 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 15.8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Maximum Power Dissipation Pd | 125W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 15.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 69A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series OptiMOS 2 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 15.8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Maximum Power Dissipation Pd 125W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 15.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS™2 Power MOSFET Family
Infineons OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
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- Infineon OptiMOS 2 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IPD33CN10NGATMA1
- Infineon OptiMOS 2 Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 BSS205NH6327XTSA1
