N-Channel MOSFET, 51 A, 250 V, 3-Pin TO-220AB onsemi FDP51N25
- RS Stock No.:
- 145-5354
- Mfr. Part No.:
- FDP51N25
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (1 tube of 50 units)**
SGD123.05
(exc. GST)
SGD134.10
(inc. GST)
Available for back order.*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over SGD250.00 (ex GST)
Units | Per unit | Per Tube** |
|---|---|---|
| 50 - 100 | SGD2.461 | SGD123.05 |
| 150 - 200 | SGD2.369 | SGD118.45 |
| 250 + | SGD2.221 | SGD111.05 |
**price indicative
- RS Stock No.:
- 145-5354
- Mfr. Part No.:
- FDP51N25
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 51 A | |
| Maximum Drain Source Voltage | 250 V | |
| Package Type | TO-220AB | |
| Series | UniFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 320 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.67mm | |
| Typical Gate Charge @ Vgs | 55 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 9.4mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 51 A | ||
Maximum Drain Source Voltage 250 V | ||
Package Type TO-220AB | ||
Series UniFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 320 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.67mm | ||
Typical Gate Charge @ Vgs 55 nC @ 10 V | ||
Transistor Material Si | ||
Height 9.4mm | ||
Minimum Operating Temperature -55 °C | ||