onsemi NVD5C688NL-D N-Channel MOSFET, 17 A, 60 V Enhancement, 3-Pin TO-252 NVD5C688NLT4G
- RS Stock No.:
- 141-7240
- Mfr. Part No.:
- NVD5C688NLT4G
- Manufacturer:
- onsemi
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
SGD22.40
(exc. GST)
SGD24.40
(inc. GST)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | SGD2.24 | SGD22.40 |
| 100 - 240 | SGD2.129 | SGD21.29 |
| 250 - 490 | SGD2.02 | SGD20.20 |
| 500 - 990 | SGD1.919 | SGD19.19 |
| 1000 + | SGD1.826 | SGD18.26 |
*price indicative
- RS Stock No.:
- 141-7240
- Mfr. Part No.:
- NVD5C688NLT4G
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | NVD5C688NL-D | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7nC | |
| Maximum Power Dissipation Pd | 18W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.38mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series NVD5C688NL-D | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7nC | ||
Maximum Power Dissipation Pd 18W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.38mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
- onsemi NVD5C688NL-D N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 NVD5C688NLT4G
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 FQP17P06
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Nexperia BUK9M5360E N-Channel MOSFET 60 V Enhancement, 4-Pin LFPAK BUK9M53-60EX
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRLR024NTRPBF
- DiodesZetex DMN10H099SK3 N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 DMN10H099SK3-13
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252 IRLR3410TRLPBF