Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8 SIR632DP-T1-RE3

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Subtotal (1 pack of 5 units)*

SGD6.41

(exc. GST)

SGD6.985

(inc. GST)

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Per Pack*
5 - 195SGD1.282SGD6.41
200 - 395SGD1.27SGD6.35
400 - 745SGD1.242SGD6.21
750 - 2245SGD1.192SGD5.96
2250 +SGD1.044SGD5.22

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Packaging Options:
RS Stock No.:
134-9723
Mfr. Part No.:
SIR632DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

150V

Package Type

SO-8

Series

SiR632DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

14nC

Maximum Power Dissipation Pd

69.5W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.25mm

Width

5.26 mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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