Vishay SiR632DP Type N-Channel MOSFET, 29 A, 150 V Enhancement, 8-Pin SO-8

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Bulk discount available

Subtotal (1 reel of 3000 units)*

SGD2,811.00

(exc. GST)

SGD3,063.00

(inc. GST)

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Units
Per unit
Per Reel*
3000 - 3000SGD0.937SGD2,811.00
6000 - 6000SGD0.865SGD2,595.00
9000 +SGD0.803SGD2,409.00

*price indicative

RS Stock No.:
134-9159
Mfr. Part No.:
SIR632DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

150V

Series

SiR632DP

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

69.5W

Forward Voltage Vf

-1.2V

Typical Gate Charge Qg @ Vgs

14nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Standards/Approvals

No

Width

5.26 mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET up to Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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