N-Channel MOSFET, 100 A, 25 V, 8-Pin SuperSO8 5 x 6 Infineon BSC009NE2LS5ATMA1
- RS Stock No.:
- 133-9834
- Mfr. Part No.:
- BSC009NE2LS5ATMA1
- Manufacturer:
- Infineon
11160 In stock for delivery within 4 working days
Added
Price Each (In a Pack of 5)
SGD2.974
(exc. GST)
SGD3.242
(inc. GST)
| Units | Per unit | Per Pack* |
| 5 - 10 | SGD2.974 | SGD14.87 |
| 15 - 20 | SGD2.862 | SGD14.31 |
| 25 + | SGD2.684 | SGD13.42 |
| *price indicative | ||
- RS Stock No.:
- 133-9834
- Mfr. Part No.:
- BSC009NE2LS5ATMA1
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- CN
Product Details
Infineon OptiMOS™5 Power MOSFETs
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage | 25 V |
| Package Type | SuperSO8 5 x 6 |
| Series | OptiMOS 5 |
| Mounting Type | Surface Mount |
| Pin Count | 8 |
| Maximum Drain Source Resistance | 1.25 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 1.2V |
| Maximum Power Dissipation | 74 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | +16 V |
| Number of Elements per Chip | 1 |
| Width | 6.35mm |
| Typical Gate Charge @ Vgs | 43 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Length | 5.49mm |
| Forward Diode Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Height | 1.1mm |