DiodesZetex Dual DMC3016LDV 2 Type P, Type N-Channel MOSFET, 21 A, 30 V Enhancement, 8-Pin PDI3333 DMC3016LDV-7
- RS Stock No.:
- 133-3340
- Mfr. Part No.:
- DMC3016LDV-7
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
SGD16.26
(exc. GST)
SGD17.72
(inc. GST)
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Temporarily out of stock
- Shipping from 06 April 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | SGD0.813 | SGD16.26 |
| 100 - 480 | SGD0.796 | SGD15.92 |
| 500 - 980 | SGD0.772 | SGD15.44 |
| 1000 - 1980 | SGD0.748 | SGD14.96 |
| 2000 + | SGD0.726 | SGD14.52 |
*price indicative
- RS Stock No.:
- 133-3340
- Mfr. Part No.:
- DMC3016LDV-7
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 21A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PDI3333 | |
| Series | DMC3016LDV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.7V | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.8W | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.15mm | |
| Height | 0.8mm | |
| Width | 3.15 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 21A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PDI3333 | ||
Series DMC3016LDV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.7V | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.8W | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.15mm | ||
Height 0.8mm | ||
Width 3.15 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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