IXYS Polar HiPerFET Type N-Channel MOSFET, 200 A, 100 V Enhancement, 4-Pin SOT-227 IXFN200N10P

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SGD38.17

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SGD41.61

(inc. GST)

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Units
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1 - 1SGD38.17
2 - 4SGD37.37
5 - 9SGD36.26
10 - 19SGD35.17
20 +SGD34.12

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RS Stock No.:
125-8040
Mfr. Part No.:
IXFN200N10P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200A

Maximum Drain Source Voltage Vds

100V

Series

Polar HiPerFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

680W

Typical Gate Charge Qg @ Vgs

235nC

Maximum Operating Temperature

175°C

Height

9.6mm

Width

25.07 mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

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