Wolfspeed C3M Type N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247 C3M0065100K
- RS Stock No.:
- 125-3453
- Mfr. Part No.:
- C3M0065100K
- Manufacturer:
- Wolfspeed
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Subtotal (1 unit)*
SGD31.99
(exc. GST)
SGD34.87
(inc. GST)
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Last RS stock
- 3 left, ready to ship from another location
- Final 1,233 unit(s) shipping from 10 June 2026
Units | Per unit |
|---|---|
| 1 + | SGD31.99 |
*price indicative
- RS Stock No.:
- 125-3453
- Mfr. Part No.:
- C3M0065100K
- Manufacturer:
- Wolfspeed
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 35A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Package Type | TO-247 | |
| Series | C3M | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 90mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Forward Voltage Vf | 4.5V | |
| Maximum Power Dissipation Pd | 113.5W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 23.6mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 35A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Package Type TO-247 | ||
Series C3M | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 90mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Forward Voltage Vf 4.5V | ||
Maximum Power Dissipation Pd 113.5W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 23.6mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
Silicon Carbide Power MOSFET, C3M Series, Cree Inc.
New C3M Silicon Carbide (SiC) MOSFET technology
Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range
New low-impedance package with driver source
8 mm of creepage/clearance between Drain and Source
High-speed switching with low output capacitance
High blocking voltage with low Drain-Source On-State Resistance
Avalanche ruggedness
Fast intrinsic diode with low Reverse Recovery
MOSFET Transistors, Cree Inc.
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