Toshiba DTMOSIV N-Channel MOSFET, 7.8 A, 650 V, 3-Pin TO-220SIS TK8A65W,S5X(M

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Subtotal 50 units (supplied in a tube)*

SGD73.90

(exc. GST)

SGD80.55

(inc. GST)

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Units
Per unit
50 - 90SGD1.478
100 - 240SGD1.345
250 - 490SGD1.234
500 +SGD1.137

*price indicative

Packaging Options:
RS Stock No.:
125-0597P
Mfr. Part No.:
TK8A65W,S5X(M
Manufacturer:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

7.8 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220SIS

Series

DTMOSIV

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

650 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

30 W

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Transistor Material

Si

Width

4.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

16 nC @ 10 V

Length

10mm

Height

15mm

Forward Diode Voltage

1.7V

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