N-Channel MOSFET, 160 A, 60 V, 3-Pin TO-247AC Infineon IRFP3306PBF
- RS Stock No.:
- 124-9011
- Mfr. Part No.:
- IRFP3306PBF
- Manufacturer:
- Infineon
Temporarily out of stock - back order for despatch 21/10/2024, delivery within 4 working days from despatch date
Added
Price Each (In a Tube of 25)
SGD3.871
(exc. GST)
SGD4.219
(inc. GST)
| Units | Per unit | Per Tube* |
| 25 - 100 | SGD3.871 | SGD96.775 |
| 125 - 225 | SGD3.82 | SGD95.50 |
| 250 - 475 | SGD3.718 | SGD92.95 |
| 500 - 975 | SGD3.52 | SGD88.00 |
| 1000 + | SGD3.144 | SGD78.60 |
| *price indicative | ||
- RS Stock No.:
- 124-9011
- Mfr. Part No.:
- IRFP3306PBF
- Manufacturer:
- Infineon
Technical data sheets
Legislation and Compliance
- COO (Country of Origin):
- MX
Product Details
Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon
Motor Control MOSFET
Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.
Synchronous Rectifier MOSFET
A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.
For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 160 A |
| Maximum Drain Source Voltage | 60 V |
| Package Type | TO-247AC |
| Series | HEXFET |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 220 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 5.31mm |
| Maximum Operating Temperature | +175 °C |
| Transistor Material | Si |
| Length | 15.87mm |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V |
| Minimum Operating Temperature | -55 °C |
| Height | 20.7mm |