ROHM RU1J002YN N-Channel MOSFET, 200 mA, 50 V Enhancement, 3-Pin SOT-323 RU1J002YNTCL
- RS Stock No.:
- 124-6836
- Mfr. Part No.:
- RU1J002YNTCL
- Manufacturer:
- ROHM
Bulk discount available
View bulk pricing optionsSubtotal (100 units, in packs of 100)*
SGD12.20
(exc. GST)
SGD13.30
(inc. GST)
FREE delivery for orders over $75.00, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 700 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | SGD0.122 | SGD12.20 |
| 500 - 900 | SGD0.117 | SGD11.70 |
| 1000 - 2400 | SGD0.111 | SGD11.10 |
| 2500 - 4900 | SGD0.106 | SGD10.60 |
| 5000 + | SGD0.101 | SGD10.10 |
*price indicative
- RS Stock No.:
- 124-6836
- Mfr. Part No.:
- RU1J002YNTCL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 200mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-323 | |
| Series | RU1J002YN | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 150mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -8V, +8V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.1mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 1.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 200mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-323 | ||
Series RU1J002YN | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 150mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -8V, +8V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 2.1mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 1.35mm | ||
Automotive Standard No | ||
N-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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