ROHM RSJ250P10 Type P-Channel MOSFET, 25 A, 100 V Enhancement, 3-Pin TO-263 RSJ250P10TL
- RS Stock No.:
- 124-6823
- Mfr. Part No.:
- RSJ250P10TL
- Manufacturer:
- ROHM
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD19.32
(exc. GST)
SGD21.06
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 15 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD3.864 | SGD19.32 |
| 25 - 45 | SGD3.784 | SGD18.92 |
| 50 - 120 | SGD3.672 | SGD18.36 |
| 125 - 245 | SGD3.56 | SGD17.80 |
| 250 + | SGD3.456 | SGD17.28 |
*price indicative
- RS Stock No.:
- 124-6823
- Mfr. Part No.:
- RSJ250P10TL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | RSJ250P10 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 50W | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 60nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 9 mm | |
| Length | 10.1mm | |
| Standards/Approvals | No | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series RSJ250P10 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 50W | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 60nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 9 mm | ||
Length 10.1mm | ||
Standards/Approvals No | ||
Height 4.5mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- KR
P-Channel MOSFET Transistors, ROHM
MOSFET Transistors, ROHM Semiconductor
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