N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK Infineon IPB117N20NFDATMA1

RS Stock No.:: 110-7458
Mfr. Part No.:: IPB117N20NFDATMA1
Manufacturer:: Infineon

N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK Infineon IPB117N20NFDATMA1

This image is representative of the product range

Bulk discount available

Price Each (On a Tape of 2)

SGD8.27

(exc. GST)

SGD9.01

(inc. GST)

2 In stock for delivery within 4 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

Units	Per unit	Per Tape**
2 - 2	SGD8.27	SGD16.54
4 - 18	SGD8.095	SGD16.19
20 - 38	SGD7.855	SGD15.71
40 - 98	SGD7.62	SGD15.24
100 +	SGD7.395	SGD14.79

**price indicative

RS Stock No.:: 110-7458
Mfr. Part No.:: IPB117N20NFDATMA1
Manufacturer:: Infineon

IPB117N20NFD OptiMOS FD Power-Transistor 200 V
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	84 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	OptiMOS FD
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	11.7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+170 °C
Length	10.31mm
Transistor Material	Si
Width	9.45mm
Typical Gate Charge @ Vgs	65 nC @ 10 V
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	4.57mm
Forward Diode Voltage	1.2V

N-Channel MOSFET, 84 A, 200 V, 3-Pin D2PAK Infineon IPB117N20NFDATMA1

Infineon OptiMOS™ FD Power MOSFET

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