STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 42 A, 710 V Enhancement, 3-Pin TO-263
- RS Stock No.:
- 103-2002
- Mfr. Part No.:
- STB57N65M5
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Subtotal (1 reel of 1000 units)*
SGD12,781.00
(exc. GST)
SGD13,931.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | SGD12.781 | SGD12,781.00 |
*price indicative
- RS Stock No.:
- 103-2002
- Mfr. Part No.:
- STB57N65M5
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 710V | |
| Package Type | TO-263 | |
| Series | MDmesh M5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 98nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 250W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Height | 4.6mm | |
| Width | 9.35 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 710V | ||
Package Type TO-263 | ||
Series MDmesh M5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 98nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 250W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Height 4.6mm | ||
Width 9.35 mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Related links
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-263 STB57N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-247
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-247 STW57N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-220 STP57N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-220 STF57N65M5
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-263
- STMicroelectronics MDmesh M5 Type N-Channel MOSFET 710 V Enhancement, 3-Pin TO-263