Vishay TrenchFET Gen IV N channel-Channel MOSFET, 461 A, 60 V Enhancement, 8-Pin PowerPAK 10 x 12 SiJK4610E
- RS Stock No.:
- 931-760
- Mfr. Part No.:
- SiJK4610E
- Manufacturer:
- Vishay
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- RS Stock No.:
- 931-760
- Mfr. Part No.:
- SiJK4610E
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 461A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | TrenchFET Gen IV | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0012Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 446W | |
| Typical Gate Charge Qg @ Vgs | 162nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | ROHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 461A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK 10 x 12 | ||
Series TrenchFET Gen IV | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0012Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 446W | ||
Typical Gate Charge Qg @ Vgs 162nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals ROHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel 60 V MOSFET designed for efficient power management and application in various electronic systems. Its robust performance is Ideal for handling high power requirements with minimal loss.
PowerPAK 10 x 12 package enhances thermal dissipation
TrenchFET technology reduces conduction losses effectively
100% tested for RDS(on) and UIS for reliable performance
Kelvin connection minimises gate noise for stable operation
Configured for single N-Channel operation in diverse applications
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