Vishay TrenchFET N-Channel MOSFET, 208 A, 45 V Enhancement, 8-Pin PowerPAK SIR608DP-T1-UE3
- RS Stock No.:
- 904-977
- Mfr. Part No.:
- SIR608DP-T1-UE3
- Manufacturer:
- Vishay
N
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | SGD3.39 |
| 10 - 24 | SGD2.21 |
| 25 - 99 | SGD1.31 |
| 100 - 499 | SGD1.27 |
| 500 + | SGD1.23 |
*price indicative
- RS Stock No.:
- 904-977
- Mfr. Part No.:
- SIR608DP-T1-UE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 208A | |
| Maximum Drain Source Voltage Vds | 45V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0012Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 104W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 50.5nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.15mm | |
| Standards/Approvals | ROHS | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 208A | ||
Maximum Drain Source Voltage Vds 45V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0012Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 104W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 50.5nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Width 5.15mm | ||
Standards/Approvals ROHS | ||
Length 6.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay power MOSFET designed for efficient performance in high power applications, offering reliable management of drain-source voltage and current. It plays a Crucial role in enhancing energy efficiency in electronic systems.
N-Channel design for optimised conductivity and performance
Maximum drain-source voltage rating of 45 V ensures robust operation
Low on-state resistance improves power efficiency and thermal performance
Integrated with avalanche rating to safeguard against excessive voltage spikes
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