Vishay TrenchFET N-Channel Single MOSFETs, 352 A, 80 V Enhancement Mode, 8-Pin PowerPAK (8x8LR) SQJQ580ER-T1_GE3

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Per Tape
1 - 9SGD7.89
10 - 49SGD4.91
50 - 99SGD2.97
100 +SGD2.90

*price indicative

RS Stock No.:
847-933
Mfr. Part No.:
SQJQ580ER-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

352A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK (8x8LR)

Series

TrenchFET

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00144Ω

Channel Mode

Enhancement Mode

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

93nC

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

12V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS3 Compliant

Width

8mm

Height

1.6mm

Length

8mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The Vishay automotive N-Channel power MOSFET delivers efficient high-performance switching for a variety of demanding applications, ensuring reliability under extreme conditions.

TrenchFET Gen V technology ensures enhanced efficiency and performance

AEC-Q101 qualified for automotive applications, assuring compliance with industry standards

Continuous drain current rated at 352 A under standard conditions

Thin profile of 1.9 mm maximises space efficiency in designs

100% tested for R and UIS, ensuring reliable operation

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