ROHM N-Channel MOSFET, 40 A, 100 V, 8-Pin DFN3333T8LSAB RH7P04BBKFRATCB
- RS Stock No.:
- 780-666P
- Mfr. Part No.:
- RH7P04BBKFRATCB
- Manufacturer:
- ROHM
N
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View bulk pricing optionsSubtotal (50 units, supplied on a continuous strip)*
SGD73.90
(exc. GST)
SGD80.55
(inc. GST)
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In Stock
- 2,995 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 50 - 245 | SGD1.478 |
| 250 + | SGD1.194 |
*price indicative
- RS Stock No.:
- 780-666P
- Mfr. Part No.:
- RH7P04BBKFRATCB
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | DFN3333T8LSAB | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 19.4Ω | |
| Maximum Power Dissipation Pd | 75W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 19.8nC | |
| Maximum Gate Source Voltage Vgs | 10V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 3.4mm | |
| Length | 3.4mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type DFN3333T8LSAB | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 19.4Ω | ||
Maximum Power Dissipation Pd 75W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 19.8nC | ||
Maximum Gate Source Voltage Vgs 10V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Width 3.4mm | ||
Length 3.4mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM Power MOSFET delivers high-performance N-channel switching for automotive power management. This robust device is engineered for ADAS and body control units, ensuring efficient performance in demanding vehicle environments up to 175°C.
Drain to source voltage of 100 V
Continuous drain current of 40 A
Typical 14.8 mOhm to 16.2 mOhm on-resistance
High power dissipation of 75 W