Infineon CoolGaN N channel-Channel Power Transistor, 30 A, 650 V Enhancement, 9-Pin PG-HDSOP-16 IGLT65R110B2AUMA1

N
Bulk discount available

Subtotal (1 unit)*

SGD10.08

(exc. GST)

SGD10.99

(inc. GST)

Add to Basket
Select or type quantity
Stock information currently inaccessible - Please check back later

Units
Per unit
1 - 9SGD10.08
10 - 49SGD8.17
50 - 99SGD6.25
100 +SGD5.01

*price indicative

RS Stock No.:
762-901
Mfr. Part No.:
IGLT65R110B2AUMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N channel

Product Type

Power Transistor

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-HDSOP-16

Series

CoolGaN

Mount Type

Surface Mount

Pin Count

9

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.61nC

Maximum Gate Source Voltage Vgs

-10V

Maximum Power Dissipation Pd

55W

Forward Voltage Vf

1V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Width

10.1mm

Standards/Approvals

RoHS Compliant

Height

2.35mm

Length

10.3mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon CoolGaN Bi-Directional Switch (BDS) utilizes gallium nitride technology to provide efficient voltage blocking in both directions. It integrates substrate voltage control, simplifying design for various industrial applications. The IGLT65R110B2 model is housed in a TOLT package, optimized for high power density.

Optimized for soft switching operation

Dual‑gate for independent bi‑directional functionality

Superior performance

Versatile for diverse industrial applications

Related links