Vishay SIZF5302DT Dual N-Channel MOSFET, 100 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-UE3
- RS Stock No.:
- 736-358
- Mfr. Part No.:
- SIZF5302DT-T1-UE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionSubtotal (1 tape of 1 unit)*
SGD2.02
(exc. GST)
SGD2.20
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 28 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | SGD2.02 |
| 10 - 24 | SGD1.31 |
| 25 - 99 | SGD0.69 |
| 100 - 499 | SGD0.67 |
| 500 + | SGD0.65 |
*price indicative
- RS Stock No.:
- 736-358
- Mfr. Part No.:
- SIZF5302DT-T1-UE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Dual N-Channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3FS | |
| Series | SIZF5302DT | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.0032Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 48.1W | |
| Typical Gate Charge Qg @ Vgs | 14.8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Dual N-Channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3FS | ||
Series SIZF5302DT | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.0032Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 48.1W | ||
Typical Gate Charge Qg @ Vgs 14.8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay Dual N-channel MOSFET, efficiently managing power in various applications such as synchronous buck and computer peripherals.
Utilises TrenchFET Gen V technology for enhanced efficiency
Features dual N-channel architecture that optimises heat dissipation
Capable of handling a maximum continuous drain current of 28.1A at 25°C
Related links
- Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS
- Vishay Dual 2 Type N-Channel Dual N-Channel 30 V (D-S) MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5302DT-T1-RE3
- Vishay SIZF456LDT Dual N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3FS SIZF456LDT-T1-UE3
- Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS
- Vishay Dual SiZF5300DT 2 Type N-Channel MOSFET 30 V, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-GE3
- Vishay SIZF4800LDT 2 Type N-Channel MOSFET 80 V Enhancement, 12-Pin 3 x 3FS
- Vishay SIZF4800LDT 2 Type N-Channel MOSFET 80 V Enhancement, 12-Pin 3 x 3FS SIZF4800LDT-T1-GE3
- Vishay Dual SiZ340ADT 2 Type N-Channel MOSFET 30 V Enhancement, 9-Pin PowerPAIR 3 x 3