Vishay SI2324BDS N channel-Channel MOSFET, 1.9 A, 100 V Enhancement, 3-Pin SOT-23 SI2324BDS-T1-GE3
- RS Stock No.:
- 736-344
- Mfr. Part No.:
- SI2324BDS-T1-GE3
- Manufacturer:
- Vishay
N
Bulk discount available
View bulk pricing optionSubtotal (1 tape of 1 unit)*
SGD0.43
(exc. GST)
SGD0.47
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
Temporarily out of stock
- Shipping from 29 June 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 24 | SGD0.43 |
| 25 - 99 | SGD0.28 |
| 100 + | SGD0.15 |
*price indicative
- RS Stock No.:
- 736-344
- Mfr. Part No.:
- SI2324BDS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SI2324BDS | |
| Package Type | SOT-23 (TO-236AB) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.21Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.86nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SI2324BDS | ||
Package Type SOT-23 (TO-236AB) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.21Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.86nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET designed to optimise power management applications, featuring a robust 100V drain-source voltage rating and enhanced thermal characteristics for efficient operation.
The high thermal resistance performance enhances reliability
Designed for LED backlighting and DC/DC converter applications
Related links
- Vishay SI Type N-Channel MOSFET 100 V Enhancement, 6-Pin SOT-363 SI1480BDH-T1-GE3
- Nexperia PMV213SN Type N-Channel MOSFET 100 V Enhancement215
- Nexperia PMV213SN Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET N channel-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2302HDS-T1-GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 3-Pin SOT-23 SI2318HDS-T1-GE3
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23
- Vishay Si2308BDS Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin SOT-23
- Vishay TrenchFET Type N-Channel Power MOSFET 20 V Enhancement, 3-Pin SOT-23 SI2302DDS-T1-GE3