ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E07BBJHRBTL

RS Stock No.:: 687-470
Mfr. Part No.:: RD3E07BBJHRBTL
Manufacturer:: ROHM

ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E07BBJHRBTL

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Subtotal (1 tape of 2 units)*

SGD2.90

(exc. GST)

SGD3.16

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

Temporarily out of stock

Shipping from 20 January 2026

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Units	Per unit	Per Tape*
2 - 18	SGD1.45	SGD2.90
20 - 48	SGD1.28	SGD2.56
50 - 198	SGD1.15	SGD2.30
200 - 998	SGD0.925	SGD1.85
1000 +	SGD0.91	SGD1.82

*price indicative

RS Stock No.:: 687-470
Mfr. Part No.:: RD3E07BBJHRBTL
Manufacturer:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	-30V
	Package Type	TO-252 (TL)
	Series	RD3E07BBJHRB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	5 V
	Maximum Power Dissipation Pd	77W
	Typical Gate Charge Qg @ Vgs	52nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.50mm
	Height	2.3mm
	Standards/Approvals	RoHS, AEC-Q101
	Width	6.8 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds -30V
	Package Type TO-252 (TL)
	Series RD3E07BBJHRB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 5 V
	Maximum Power Dissipation Pd 77W
	Typical Gate Charge Qg @ Vgs 52nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.50mm
	Height 2.3mm
	Standards/Approvals RoHS, AEC-Q101
	Width 6.8 mm
	Automotive Standard AEC-Q101

Datasheet - RD3E07BBJHRBTL

COO (Country of Origin):: JP

The ROHM P channel power MOSFET designed for high performance in demanding applications. With a maximum continuous drain current of ±78A and a breakdown voltage of -30V, this MOSFET is ideal for use in automotive and industrial environments requiring robust efficiency. Its compact DPAK package enables easy integration into various designs, while its low on-resistance of 8.5mΩ significantly reduces energy loss. The product is also AEC-Q101 qualified, ensuring reliability in harsh conditions, making it a perfect choice for designers seeking high-quality and durable components for their electronic applications.

Features low on resistance for improved efficiency and reduced heat generation

Offers a maximum power dissipation of 77W for high power applications

Designed to withstand a wide operating temperature range of -55 to +175°C

AEC Q101 qualified, ensuring high reliability for automotive applications

Provides 100% avalanche testing for enhanced durability under stress

Complies with Pb free and RoHS standards for environmentally friendly use

Packaged in a DPAK format for easy mounting and integration

Supports a pulsed drain current capability of ±156A for dynamic load conditions.

ROHM RD3E07BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E07BBJHRBTL

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

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