ROHM AG091FLD3HRB N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL)
- RS Stock No.:
- 687-462P
- Mfr. Part No.:
- AG091FLD3HRBTL
- Manufacturer:
- ROHM
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SGD27.10
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SGD29.54
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In Stock
- 82 unit(s) ready to ship from another location
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Units | Per unit |
|---|---|
| 20 - 48 | SGD1.355 |
| 50 - 198 | SGD1.225 |
| 200 - 998 | SGD0.98 |
| 1000 + | SGD0.965 |
*price indicative
- RS Stock No.:
- 687-462P
- Mfr. Part No.:
- AG091FLD3HRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | AG091FLD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 76W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.8mm | |
| Length | 10.5mm | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series AG091FLD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 76W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.8mm | ||
Length 10.5mm | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel Power MOSFET designed for automotive applications, providing exceptional efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current capacity of 80A, this MOSFET ensures optimal performance in demanding environments. Its low on-resistance of 7.5mΩ significantly reduces power losses, making it suitable for various automotive systems and high-current applications. The device is RoHS compliant with Pb-free plating, ensuring environmental safety while maintaining robust performance under stringent conditions.
Low on resistance for improved efficiency and reduced heat generation
AEC Q101 qualified, ensuring high reliability in automotive applications
100% avalanche tested for enhanced safety and durability
Wide operating junction temperature range from -55 to +175 °C for versatile use
Robust power dissipation capacity of 76W to handle significant loads
Tape packaging facilitates ease of handling and assembly in manufacturing environments
Embossed packaging specifications ensure secure dynamics during transport