ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

RS Stock No.:: 687-380
Mfr. Part No.:: RQ3P120BKFRATCB
Manufacturer:: ROHM

ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

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Subtotal (1 tape of 2 units)*

SGD2.00

(exc. GST)

SGD2.18

(inc. GST)

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

Temporarily out of stock

Shipping from 20 January 2026

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Units	Per unit	Per Tape*
2 - 18	SGD1.00	SGD2.00
20 - 48	SGD0.88	SGD1.76
50 - 198	SGD0.795	SGD1.59
200 - 998	SGD0.635	SGD1.27
1000 +	SGD0.625	SGD1.25

*price indicative

RS Stock No.:: 687-380
Mfr. Part No.:: RQ3P120BKFRATCB
Manufacturer:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type N
	Maximum Drain Source Voltage Vds	100V
	Package Type	HSMT-8AG
	Series	RQ3P120BKFRA
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	58mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	40W
	Typical Gate Charge Qg @ Vgs	6.9nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Operating Temperature	150°C
	Length	3.30mm
	Width	300 mm
	Height	0.9mm
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type N
	Maximum Drain Source Voltage Vds 100V
	Package Type HSMT-8AG
	Series RQ3P120BKFRA
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 58mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 40W
	Typical Gate Charge Qg @ Vgs 6.9nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Operating Temperature 150°C
	Length 3.30mm
	Width 300 mm
	Height 0.9mm
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - RQ3P120BKFRATCB

COO (Country of Origin):: JP

The ROHM N channel power MOSFET designed for efficient energy management in various applications. Capable of withstanding drain-source voltages of up to 100V and continuous current ratings of ±12A, this MOSFET excels in both power density and thermal resistance. The compact HSMT8AG package significantly reduces PCB space requirements by 64%, making it an ideal choice for modern electronic designs that demand reliability and efficiency. With AEC-Q101 qualification, it ensures robust operation in automotive applications, serving a wide range of use cases from ADAS to lighting solutions.

Small high-powered package optimises space on PCBs by 64%

High mounting reliability achieved through innovative terminal and plating treatments

AEC Q101 qualification ensures reliability in automotive applications

Designed to handle a maximum power dissipation of 40W for effective thermal management

Low on-state resistance of 58mΩ enhances efficiency and performance

Robust gate-source voltage tolerance of ±20V expands integration possibilities

Avalanche rating of 8A and energy dissipation of 5.2mJ provides extra protection during operation

Highly reliable operation across a temperature range of -55 to +150°C

ROHM RQ3P120BKFRA Type N-Channel Single MOSFETs, 100 V Enhancement, 8-Pin HSMT-8AG RQ3P120BKFRATCB

FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28

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