DiodesZetex Type N-Channel MOSFET, 270 mA, 60 V Enhancement, 3-Pin E-Line ZVN3306A
- RS Stock No.:
- 655-543
- Mfr. Part No.:
- ZVN3306A
- Manufacturer:
- DiodesZetex
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 5 units)*
SGD5.89
(exc. GST)
SGD6.42
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- 945 unit(s) ready to ship from another location
- Plus 5,250 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | SGD1.178 | SGD5.89 |
| 25 - 95 | SGD1.152 | SGD5.76 |
| 100 - 245 | SGD1.116 | SGD5.58 |
| 250 - 495 | SGD1.08 | SGD5.40 |
| 500 + | SGD1.046 | SGD5.23 |
*price indicative
- RS Stock No.:
- 655-543
- Mfr. Part No.:
- ZVN3306A
- Manufacturer:
- DiodesZetex
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 270mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | E-Line | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 625mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.01mm | |
| Standards/Approvals | No | |
| Width | 2.41 mm | |
| Length | 4.77mm | |
| Automotive Standard | AEC-Q100, AEC-Q200, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 270mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type E-Line | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 625mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 4.01mm | ||
Standards/Approvals No | ||
Width 2.41 mm | ||
Length 4.77mm | ||
Automotive Standard AEC-Q100, AEC-Q200, AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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