Vishay SIR5812DP Type N-Channel Single MOSFETs, 45.3 A, 80 V Enhancement, 8-Pin PowerPAK SIR5812DP-T1-RE3
- RS Stock No.:
- 653-197
- Mfr. Part No.:
- SIR5812DP-T1-RE3
- Manufacturer:
- Vishay
This image is representative of the product range
Subtotal (1 reel of 3000 units)*
SGD2,004.00
(exc. GST)
SGD2,184.00
(inc. GST)
FREE delivery for orders over $150, or create a business account to enjoy free delivery from just $28
In Stock
- Plus 6,000 unit(s) shipping from 02 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | SGD0.668 | SGD2,004.00 |
*price indicative
- RS Stock No.:
- 653-197
- Mfr. Part No.:
- SIR5812DP-T1-RE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 45.3A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK | |
| Series | SIR5812DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0135Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 7.5nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.04mm | |
| Standards/Approvals | No | |
| Length | 5.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 45.3A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK | ||
Series SIR5812DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0135Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 7.5nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.04mm | ||
Standards/Approvals No | ||
Length 5.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a PowerPAK SO-8, it's Ideal for DC/DC converters, synchronous rectification, motor control, and hot swap switching.
Pb Free
Halogen free
RoHS compliant
Related links
- Vishay SIR5812DP Type N-Channel Single MOSFETs 80 V Enhancement, 8-Pin PowerPAK
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK SISS178LDN-T1-UE3
- Vishay SISS178LDN Type N-Channel Single MOSFETs 70 V Enhancement, 8-Pin PowerPAK
- Vishay SIRS5700DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIRS5702DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIRS4300DP Type N-Channel Single MOSFETs 30 V Enhancement, 8-Pin PowerPAK
- Vishay SIRS5700DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIRS5700DP-T1-RE3
- Vishay SIRS5702DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIRS5702DP-T1-RE3